Pseudomorphic to orthomorphic growth of Fe films onCu3Au(001)
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چکیده
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Generation and recovery of strain in 28Si-implanted pseudomorphic GeSi films on Si(100)
Effects of ion implantation of 320 keV “Si at room temperature in pseudomorphic metastable Ge$i,-, (x-0.04, 0.09, 0.13) layers 170 nm thick grown on Si( 100) wafers were characterized by x-ray double-crystal diffractometry and MeV 4He channeling spectrometry. The damage induced by implantation produces additional compressive strain in the Ge$i, _ x layers, superimposed on the intrinsic compress...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2002
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.66.045402